| Autor: |
Wittorf, D. |
| Jazyk: |
němčina |
| Rok vydání: |
1999 |
| Předmět: |
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| Zdroj: |
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Berichte des Forschungszentrums Jülich 3637, 165 p. (1999). = Aachen, Techn. Hochsch., Diss., 1999 |
| Popis: |
Interfaces and grain boundaries in [001]-oriented diamond films deposited on silicon (001) by chemical vapor deposition has been investigated in plan-view and cross-section samples by high-resolution transmission electron microscopy and electron energy loss spectroscopy. The different interface structures and orientation relationships between diamond films and silicon substrates, Si$_{1-x}$C$_{x}$-buffer layers, $\beta$-silicon carbide interlayers and substrates are shown. Interfaces with a direct coupling of the lattice planes are observed with an average matching of either three diamond to two silicon lattice planes or five diamond to four silicon carbide lattice planes. The interfaces are analyzed by the use of a near coincidence-site lattice model. Smallangle and {l11}-faceted large-angle grain boundaries are formed during columnar growth of the diamond grains. Small-angle grain boundaries in 10 $\mu$m thick diamond films are shown in high-resolution micrographs in the [001]-zone axis and can be described by the dislocation model. The presence of boron in the gas phase was found to enhance the step-flow lateral grain growth and leads to the formation of sm all-angle grain boundaries. As a result, the degree of orientational perfection of the diamond films is improved. A model is proposed for the formation of the interfaces in the early stages of the diamond film deposition. The use of Si$_{1-x}$C$_{x}$-buffer layers for the diamond heteroepitaxy is discussed and the structures of the interfaces and of the grain boundaries are analyzed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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