| Autor: |
Thillosen, N., Cabañas, S., Kaluza, N., Guzenko, V.A., Hardtdegen, H., Schäpers, T. |
| Jazyk: |
angličtina |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
Physical review / B 73(24), 241311 (2006). doi:10.1103/PhysRevB.73.241311 |
| DOI: |
10.1103/PhysRevB.73.241311 |
| Popis: |
Weak antilocalization and the Shubnikov-de Haas effect were investigated in AlxGa1-xN/GaN two-dimensional electron gases. The weak antilocalization measurements on a gated sample revealed a constant spin-orbit scattering length, which does not change if the Al content or the thickness of the AlxGa1-xN barrier layer is varied. The occurrence of spin-orbit coupling is assigned to the lack of crystal inversion symmetry. Although for some of the samples a beating pattern was observed in the Shubnikov-de Haas oscillations, its presence was not attributed to spin-orbit coupling but rather to inhomogeneities in the AlxGa1-xN barrier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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