Electrical and optical characterization of porous silicon/p-crystalline silicon heterojunction diodes
| Autor: | Fonthal F, Trifonov T, Rodríguez A, Goyes C, Marsal L, Ferré-Borrull J, Pallarès J |
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| Přispěvatelé: | Universitat Rovira i Virgili |
| Rok vydání: | 2008 |
| Předmět: |
Medicina ii
Biotecnología Matemática / probabilidade e estatística Ciências agrárias i Odontología Ciências biológicas iii Engenharias i Ciências ambientais Medicina veterinaria Geociências Physics and astronomy (all) Engenharias iii Geografía General physics and astronomy Engenharias ii Biodiversidade Astronomia / física Interdisciplinar Physics and Astronomy (Miscellaneous) Química Engenharias iv Farmacia Materiais Ciências biológicas ii Ciências biológicas i Ciência da computação |
| Zdroj: | Aip Conference Proceedings Aip Conference Proceedings. 992 780-785 |
| DOI: | 10.1063/1.2926970 |
| Popis: | The photoelectrical properties of porous silicon (PS) layers on p-type silicon were studied using two structures Au/PS/p-Si/AI (photodiode) and Au/PS/Au (photoconductor) with two different low porosity PS layer thicknesses each one. The electrical characteristics of the four fabricated devices were compared under three different light sources: a cold white lamp with an IR filter, a 465 nm blue LED and a 945 nm IR LED. Our results show a linear dependence between the measured photocurrent and the illumination power for all light sources and all studied devices. The limiting transport mechanisms in the Au/PS contact and in the PS/p-Si junction were obtained by comparing the performance of the devices. © 2008 American Institute of Physics. |
| Databáze: | OpenAIRE |
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