Highly-efficient Ho:KY(WO4)2thin-disk lasers at 2.06 μm

Autor: Mateos X, Loiko P, Lamrini S, Scholle K, Fuhrberg P, Suomalainen S, Härkönen A, Guina M, Vatnik S, Vedin I, Aguiló M, Diáz F, Wang Y, Griebner U, Petrov V
Přispěvatelé: Universitat Rovira i Virgili
Rok vydání: 2018
Předmět:
Zdroj: Proceedings Of Spie-The International Society For Optical Engineering
Proceedings Of Spie-The International Society For Optical Engineering. 10713 (UNSP 107130J)
DOI: 10.1117/12.2316822
Popis: © 2018 SPIE. The recent advances in the development of Holmium monoclinic double tungstate thin-disk lasers are reviewed. The thin-disk is based on a 250-μm-thick 3 at. % Ho:KY(WO4)2active layer grown on a (010)-oriented KY(WO4)2substrate. When pumped by a Tm-fiber laser at 1960 nm with a single-bounce pump geometry, the continuous-wave Ho:KY(WO4)2thin-disk laser generates an output power of 1.01 W at 2057 nm corresponding to a slope efficiency η of 60% and a laser threshold of only 0.15 W. The thin-disk laser is passively Q-switched with a GaSb-based quantum-well semiconductor saturable absorber mirror. In this regime, it generates an average output power of 0.551 W at ∼2056 nm with η = 44%. The best pulse characteristics are 4.1 μJ/201 ns at a repetition rate of 135 kHz. The laser performance, beam quality and thermo-optic aberrations of such lasers are strongly affected by the Ho3+doping concentration. For the 3 at.% Ho3+-doped thin-disk, the thermal lens is negative (the sensitivity factors for the two principal meridional planes are-1.7 and-0.6 m-1/W) and astigmatic. The Ho:KY(WO4)2epitaxial structures are promising as active elements in mode-locked thin-disk lasers at ∼2060 nm.
Databáze: OpenAIRE