Laser induced epitaxy of Ni and Co silicides

Autor:	Schroeder, Brett Robert
Přispěvatelé:	Comrie, Craig M
Jazyk:	angličtina
Rok vydání:	1995
Předmět:	Physics InformationSystems_INFORMATIONSTORAGEANDRETRIEVAL ComputingMethodologies_DOCUMENTANDTEXTPROCESSING GeneralLiterature_REFERENCE(e.g. dictionaries encyclopedias glossaries)
Popis:	Includes bibliographical references. Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on substrates1 as well as Ni on substrates. The best yield achieved for Co on substrates is 35%. The formation of a non-equilibrium epitaxial monosilicide was also achieved. Numerical calculations based on a heat flow approach gave fair quantitative agreement with experiment.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______3158::36a516d90ea3d48a7bb9a7f78965032e http://hdl.handle.net/11427/16013 Zobrazit plný text záznamu