Band gap energies of CdO : F semiconductor films produced by ultrasonic spray pyrolysis method
| Autor: | Irmak, Sinan, Kul, Metin |
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| Přispěvatelé: | Cetin, SA, Hikmet, I, Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü, Kul, Metin |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: | |
| Popis: | 6th International Conference of the Balkan-Physical-Union -- AUG 22-26, 2006 -- Istanbul, TURKEY WOS: 000246647900322 The fluorine doped cadmium oxide (CdO:F) samples have been deposited by ultrasonic spray pyrolysis method (USP). The absorption spectra of the samples showed that CdO:F is a direct band gap material. The direct optical transition has shifted towards the shorter wavelengths, and the transparency of the material has increased at a given wavelength above the fundamental absorption edge. The optical band gap (E-g) has found to be 2,28 eV for undoped CdO films. A shift in the absorption edge of the fluorine doped CdO films with increasing fluorine concentration is explained by means of the Moss-Burstein effect. Balkan Phys Union, Turkish Phys Soc, Istanbul Univ, Yildiz Tech Univ, Bogaz Univ, Dogus Univ, European Phys Soc, Govt Istanbul, Istanbul Metropolitan Municipal, Turkish Atomic Energy Author, Sci & Technol Res Council Turkey, United Natl Educ Sci & Cultutal Org, NEL Electronik |
| Databáze: | OpenAIRE |
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