Caracteriza????o Estrutural e ??ptica da Solu????o S??lida Nanoestruturada Sn(Se1-xSx) com x = 0, 0,24, 0,5, 0,76 e 1 produzida por Mecano-S??ntese

Autor: Arenillas, Nahuel Oliveira
Přispěvatelé: Trich??s, Daniela Menegon, Frota, Hidembergue Ordozgoith da, Borges, Zeane Vieira
Jazyk: portugalština
Rok vydání: 2020
Předmět:
Zdroj: Biblioteca Digital de Teses e Dissertações da UFAM
Universidade Federal do Amazonas (UFAM)
instacron:UFAM
Popis: Submitted by Nahuel Arenillas (nahuel@ufam.edu.br) on 2020-03-10T21:42:56Z No. of bitstreams: 3 Disserta????o-Nahuel.pdf: 95341640 bytes, checksum: c81d43f0cb928303e54fdaca8ded655b (MD5) carta-encaminhamento.pdf: 512744 bytes, checksum: 648abfc3391d68e734316f00ad4378c4 (MD5) ata-nahuel.pdf: 444731 bytes, checksum: d74e682ff4de8ba2a81e09132ace11ae (MD5) Approved for entry into archive by PPGFIS F??sica (ppgfisufam.sec@gmail.com) on 2020-03-10T22:02:21Z (GMT) No. of bitstreams: 3 Disserta????o-Nahuel.pdf: 95341640 bytes, checksum: c81d43f0cb928303e54fdaca8ded655b (MD5) carta-encaminhamento.pdf: 512744 bytes, checksum: 648abfc3391d68e734316f00ad4378c4 (MD5) ata-nahuel.pdf: 444731 bytes, checksum: d74e682ff4de8ba2a81e09132ace11ae (MD5) Rejected by Divis??o de Documenta????o/BC Biblioteca Central (ddbc@ufam.edu.br), reason: Corre????o da entrada da ficha catalogr??fica. Onde se l??: Arenillas, Nahuel Olveira, dever?? ser corrigido para Arenillas, Nahuel Oliveira. on 2020-03-11T12:56:07Z (GMT) Submitted by Nahuel Arenillas (nahuel@ufam.edu.br) on 2020-03-11T16:06:57Z No. of bitstreams: 3 carta-encaminhamento.pdf: 512744 bytes, checksum: 648abfc3391d68e734316f00ad4378c4 (MD5) ata-nahuel.pdf: 444731 bytes, checksum: d74e682ff4de8ba2a81e09132ace11ae (MD5) Disserta????o-Nahuel.pdf: 95341641 bytes, checksum: 8d1907e4be97abae91c15c7b5e9b9cbe (MD5) Approved for entry into archive by PPGFIS F??sica (ppgfisufam.sec@gmail.com) on 2020-04-01T20:34:21Z (GMT) No. of bitstreams: 3 carta-encaminhamento.pdf: 512744 bytes, checksum: 648abfc3391d68e734316f00ad4378c4 (MD5) ata-nahuel.pdf: 444731 bytes, checksum: d74e682ff4de8ba2a81e09132ace11ae (MD5) Disserta????o-Nahuel.pdf: 95341641 bytes, checksum: 8d1907e4be97abae91c15c7b5e9b9cbe (MD5) Approved for entry into archive by Divis??o de Documenta????o/BC Biblioteca Central (ddbc@ufam.edu.br) on 2020-04-02T01:34:02Z (GMT) No. of bitstreams: 3 carta-encaminhamento.pdf: 512744 bytes, checksum: 648abfc3391d68e734316f00ad4378c4 (MD5) ata-nahuel.pdf: 444731 bytes, checksum: d74e682ff4de8ba2a81e09132ace11ae (MD5) Disserta????o-Nahuel.pdf: 95341641 bytes, checksum: 8d1907e4be97abae91c15c7b5e9b9cbe (MD5) Made available in DSpace on 2020-04-02T01:34:02Z (GMT). No. of bitstreams: 3 carta-encaminhamento.pdf: 512744 bytes, checksum: 648abfc3391d68e734316f00ad4378c4 (MD5) ata-nahuel.pdf: 444731 bytes, checksum: d74e682ff4de8ba2a81e09132ace11ae (MD5) Disserta????o-Nahuel.pdf: 95341641 bytes, checksum: 8d1907e4be97abae91c15c7b5e9b9cbe (MD5) Previous issue date: 2020-01-14 Conselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico - CNPq SnX2 semiconductors (where X = Se, S, Te) have been extensively studied in recent years due to the variety of applications for electronic, optical and optoelectronic devices, as well as being a material of low toxicity, low cost, own layered structure and having the possibility to regulate the optical energy gap by modifying the proportion of the material stoichiometry. In this context, this study had produced a nanostructured solid solution Sn(Se1???xSx) to x = 0, 0,24, 0,5, 0,76 and 1 using the Mecano-Synthesis technique. The samples were investigated using X ray Diffraction, Rietveld Method, Differential Scanning Calorimetry and Ultraviolet-visible Spectrophotometry techniques which demonstrated that samples were formed with an orthorhombic structure with anisotropic microdeformation of 4,9% on average. It was also possible to verify that the diffractogram peaks shift to the right as we gradually replace selenium with sulfur into the solution. The samples kept stable at temperatures up to 200??C and they disintegrated at temperatures above 600??C. Direct and indirect energy optical gaps were also observed from samples that showed different values from the literature and may be linked to two main factors: 1) the method used to obtain the energy absorption in which water was used as a solvent to solubilize with the sample and 2) mass concentration of samples in solvent. The values gained from the optical energy gap range from 0,67 to 4,0 eV for indirect gap and 4,1 to 5,4 eV for direct gap. Os semicondutores SnX2 (onde X = Se, S, Te) t??m sido muito estudados nos ??ltimos anos devido ??s variedades de aplica????es para dispositivos eletr??nicos, ??pticos e optoeletr??nicos, al??m de serem materiais de baixa toxicidade, baixo custo, possuir estrutura em camadas e ter a possibilidade de regular o gap ??ptico de energia a partir da modifica????o da propor????o de estequiometria do material. Neste cen??rio este trabalho produziu uma solu????o s??lida nanoestruturada Sn(Se1???xSx) para x = 0, 0,24, 0,5, 0,76 e 1 utilizando a t??cnica Mecano-S??ntese. As amostras foram investigadas utilizando as t??cnicas de Difra????o de Raios X, M??todo de Rietveld, Calorimetria Diferencial de Varredura e Espectrometria Ultra Violeta e Vis??vel onde foi poss??vel constatar que as amostras se formaram com uma estrutura ortorr??mbica com microdeforma????o anisotr??pica de 4,9% em m??dia, e verificar que os picos do difratograma se deslocam para a direita ?? medida que substitu??mos gradativamente sel??nio por enxofre na solu????o. As amostras se mostraram est??veis para temperaturas de at?? 200??C e se desintegram para temperaturas acima de 600??C. Tamb??m foram observados gaps ??pticos de energia diretos e indiretos que mostraram valores diferentes da literatura e podem estar ligados ao m??todo utilizado para obter a absor????o de energia em que se utilizou a ??gua como solvente para solubilizar com a amostra. Os valores obtidos do gap ??ptico de energia variam de 0,67 a 4,0 eV para o gap indireto e 4,1 a 5,4 eV para o gap direto.
Databáze: OpenAIRE
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