Impurity resistivity of the double-donor system Si:P,Bi

Autor:	Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov, Zheng, Hairong, Sarachik, M.P.
Jazyk:	angličtina
Rok vydání:	1999
Předmět:	Dopagem de semicondutores Boro Retroespalhamento rutherford Semicondutores Implantação de íons Fósforo Impurezas Silício Temperatura Transição metal isolante Condutividade elétrica
Zdroj:	Repositório Institucional da UFRGS Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS
Popis:	The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______3056::bb3b7d288e6a6930fdcc47d648d9826c Zobrazit plný text záznamu