Electrical resistivity of bismuth implanted into silicon

Autor:	Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
Jazyk:	angličtina
Rok vydání:	1996
Předmět:	Física da matéria condensada Dopagem de semicondutores Implantação de íons Impurezas Condutividade elétrica
Zdroj:	Repositório Institucional da UFRGS Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS
Popis:	We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______3056::a00dfe970cd4c1f912f56c1d9232b093 Zobrazit plný text záznamu