Extraction of the extrinsic base resistance of SiGe: C HBTs at 300 K and at 40 K

Autor:	Eloy Ramírez-García, Gonzalo Pacheco-Álvarez, Omar Ramírez-Sampedro
Jazyk:	angličtina
Rok vydání:	2015
Předmět:	Apparent base resistance heterojunction bipolar transtistors Ingeniería intrinsic base resistance extrinsic base resistance
Zdroj:	Instituto Politécnico Nacional IPN Redalyc-IPN Científica (México) Num.2 Vol.19
Popis:	"This paper introduces the results of the extraction of the extrinsic base resistance reported ( R Bx ) of a silicon germanium carbon (SiGe:C) heterojunction bipolar transistor (HBT) at room (300 K) and low temperature (40 K). The technique is based on S -parameters and electric modeling. In state-of-the- art SiGe:C HBT RBx is the parameter that limits the increase the maximum oscillation frequency ( f MAX ). Hence a technique that permits the R Bx extraction may be useful to designers to improve f MAX performances, and develop applications in the terahertz regime."
Databáze:	OpenAIRE
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