a-SiOx < Er gt; active photonic crystal resonator membrane fabricated by focused Ga+ ion beam
| Autor: | Figueira, David da Silva Leocadio, 1980, Barêa, Luís Alberto Mijam, 1982, Vallini, Felipe, 1985, Jarschel, Paulo Felipe, 1985, Carvalho, Rossano Lang, 1973, Frateschi, Newton Cesário, 1962 |
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| Přispěvatelé: | UNIVERSIDADE ESTADUAL DE CAMPINAS |
| Rok vydání: | 2012 |
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| Zdroj: | Repositório da Produção Científica e Intelectual da Unicamp Universidade Estadual de Campinas (UNICAMP) instacron:UNICAMP |
| Popis: | Agradecimentos: The authors would like to thank F. Iikawa for his interest and help on the µ-PL measurements. This work was supported by the Brazilian financial agencies: FAPESP, CNPq, CAPES, and was done within the National Institute for Science and Technology (FOTONICOM) and the Center for Optics and Photonics (CePOF) Abstract: We have fabricated thin erbium-doped amorphous silicon suboxide (a-SiOx < Er gt;) photonic crystal membrane using focused gallium ion beam (FIB). The photonic crystal is composed of a hexagonal lattice with a H1 defect supporting two quasi-doubly degenerate second order dipole states. 2-D simulation was used for the design of the structure and full 3-D FDTD (Finite-Difference Time-Domain) numerical simulations were performed for a complete analysis of the structure. The simulation predicted a quality factor for the structure of Q = 350 with a spontaneous emission enhancement of 7. Micro photoluminescence measurements showed an integrated emission intensity enhancement of similar to 2 times with a Q = 130. We show that the discrepancy between simulation and measurement is due to the conical shape of the photonic crystal holes and the optical losses induced by FIB milling FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESP CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQ COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES Aberto |
| Databáze: | OpenAIRE |
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