| Autor: |
Maxim Guc, Eduard Bailo, Robert Fonoll-Rubio, Fabien Atlan, Marcel Placidi, Philip Jackson, Dimitrios Hariskos, Xavier Alcobe, Paul Pistor, Ignacio Becerril-Romero, Alejandro Perez-Rodriguez, Francisco Ramos, Victor Izquierdo-Roca |
| Rok vydání: |
2022 |
| Předmět: |
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| Popis: |
Cu-poor compositions are key for obtaining high efficiency Cu(In,Ga)Se2 (CIGSe) devices. These conditions lead to Cu deficit accommodation mechanisms like the formation of Cu-related defectsin the CIGSe crystal structure or of ordered vacancy compound. However, the origin of the benefits of Cu-poor compositions is still under discussion since these mechanisms are difficult to detect and characterize. In this work, a high precision Raman spectroscopy and X-ray diffraction analysis on a compositionally-graded CISe sample ([Cu]/[In] ratios from 0.48 to 1.03) allows us to shed light on this topic by reporting the detection of a “defective chalcopyrite phase” in the slightly Cu-poor compositional regime that may play a critical role, rather than other previously discussed mechanisms, on device performance. This phase is mainly characterized by the formation of a specific defect in the CISe structure which also contributes to appearance of a Raman peak at 230 cm-1. Finally, the analysis of high efficiency (>18 %) CIGSe solar cells and the extrapolation of the results on defect formation obtained for CISe, suggest a possible impact of the defective chalcopyrite phase on the open circuit voltage of the devices, and opens a possible way to further investigate and develop the chalcopyrite based technologies. Final version of this work have been published in Acta Materialia 223 (2022) 117507.https://doi.org/10.1016/j.actamat.2021.117507 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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