| Autor: |
Alex Jimenez-Arguijo, Alejandro Navarro Güell, Yudania Sánchez, Claudia Malerba, Matteo Valentini, Pascal Becker, Leo Choubrac, Thomas Unold, Zacharie Jehl Li-Kao, Sergio Giraldo, Edgardo Saucedo |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Popis: |
Kesterite Cu2ZnSnSxSe4-xis among the most promising inorganic earth-abundant thin film photovoltaic technologies, although currently, the larger voltage deficit compared to more mature chalcogenide technologies is hampering solar-to-electricity conversion efficiency progress in these materials. Most of the latest reports agree on the CZTSSe defect structure as the main limitation for the open circuit voltage. Small atom doping is suggested as an interesting strategy to reduce the concentration of defects without affecting secondary phase formation. In this study, we explore an innovative approach based on the introduction of LiAlH4and its further decomposition during the selenization process of CZTSe precursors, as a pathway for hydrogen and lithium/alkali transient doping. This process shows a strong beneficial influence on the crystal growth and solar cell device performance, especially with a significant improvement in Vocand FF. We demonstrate a reduction of non-radiative recombination, and a remarkable 4-fold increase in the carrier lifetime correlating with the reduction of the Vocdeficit below 330 mV. A mechanism on how small atoms (Li and H) interact to reduce the concentration of SnZnrecombination centers while keeping doping relatively unchanged is proposed, opening fundamental perspectives for the simple and universal transient doping of thin film chalcogenide compounds. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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