| Popis: |
Defect characterization of 2D materials is a critical aspect for their successful integration in future electronic devices. Here, a simple characterization technique is proposed that opens a path for fast, non-invasive, quality assessment of transition metal dichalcogenide (TMDC) layers, such as MoS2, and their interfaces. It relates to the correlation between substrate-induced traps and the indirect-to- direct photoluminescence peak ratio. It is shown that the indirect peak is quenched when interfacial trap sites are present. A physical mechanism is proposed to explain the observations based on different recombination mechanisms. |
