| Autor: |
Tatarchuk, Dmytro Dmytrovych, Molchanov, Vitalii Ivanovych, Didenko, Yurii Viktorovych, Poplavko, Yurii Myhailovych, Franchuk, Anton Serhiiovych |
| Jazyk: |
ukrajinština |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
Електроніка та зв'язок : науково-технічний журнал, Т. 22, № 4(99) |
| DOI: |
10.20535/2312-1807.2017.22.4.82290 |
| Popis: |
У статті показано можливість створення на основі тонких напівпровідникових резонаторів частотно-селективних пристроїв НВЧ з електронним керуванням. Доведено, що як тонкий напівпровідниковий резонатор можна використовувати p-i-n діод з певним відношенням товщини до поперечних розмірів. Описано методику й наведено результати теоретичних та експериментальних досліджень безкорпусних p-i-n діодів. The classification of methods for controlling microwave characteristics of systems based on dielectric resonators are described in the article. Their advantages and disadvantages are analyzed. The resonant properties of p-i-n diodes in millimeter wavelength range are experimentally investigated. It has been experimentally established that the resonant characteristics of such systems depend on the direct current of the p-i-n diode. Given the structure of the p-i-n diode, two basic assumptions can be made regarding the nature of its resonant properties: the resonance of a segment of a microstrip transmission line or a dielectric resonance of the E-type in a thin dielectric resonator. In the first case, the resonance frequencies of such structure can be calculated on the basis of well-known ratios for segments of microstrip lines. In the second case, the problem of calculating the eigenfrequencies of such resonator is reduced to the solution of the Helmholtz equations. The calculation of electrodynamic characteristics (namely, resonance frequencies and quality factors) of unpackaged p-i-n diodes as segments of a microstrip transmission line and as a dielectric resonator with an E-type oscillation is carried out. Based on the comparison of the results of theoretical and experimental studies, it has been shown that the p-i-n diode with a certain ratio of thickness to transverse dimensions can be considered as a thin semiconductor resonator with an E-type oscillations. The change in the direct current of the p-i-n diode used as a resonant element in the range of 0 ... 400 μA provides a change in its resonance frequency by almost 3% for a slight decrease in the quality factor (from 320 to 300). Thus, the possibility of the creation of electronically controlled millimeter wavelengths of frequency-selective devices based on the thin semiconductor resonators (p-i-n diodes) is shown. The process of fabricating such structures may be based on well-worked out planar technology, which will enable the active and passive elements, as well as resonance circles, to be produced on a crystal in a single technological cycle. В статье показана возможность создания на основе тонких полупроводниковых резонаторов частотно-селективних устройств СВЧ с электронным управлением. Доказано, что в качестве тонкого полупроводникового резонатора можно использовать безкорпусный p-i-n диод с определенным отношением толщины к поперечным размерам. Описана методика и приведены результаты теоретических и экспериментальных исследований безкорпусных p-i-n диодов. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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