Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals
| Autor: | von Bardeleben, Jurgen, Cantin, Jean-Louis, Ke, L, Shishkin, Y, Devaty, Rp, Choyke, Wj |
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| Přispěvatelé: | Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Nipoti, R and Poggi, A and Scorzoni |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | 5th European Conference on Silicon Carbide and Related Materials 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.273-276 |
| Popis: | International audience; The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C-3V symmetry, g(//)=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and A(B//)[(001])=48G and superhyperfine (SHF) interaction with three equivalent Si neighbouf atoms and T-B//[001]=12.4G, allow us to attribute the center to a sp(3) coordinated carbon dangling bond center, P-bC. |
| Databáze: | OpenAIRE |
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