| Autor: |
Shin, H. C., Tahir, Dahlang, Seo, S., Denny, Y. R., Oh, S. K., Kang, H. J., Heo, S., Chung, J. G. |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
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| Popis: |
The band alignment of HfZrO4 gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO4 gate oxide thin film is 5.40 0.05 eV. The valence band offset (??Ev) and the conduction band offset (??Ec) are 2.50 0.05 eV and 1.78 0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO4 thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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