A high-density DRAM cell with built-in gain stage

Autor: Kamoulakos, G. Tsiatouhas, Y. Chrisanthopoulos, A. Arapoyanni, A.
Jazyk: angličtina
Rok vydání: 2001
Předmět:
Popis: A high density dynamic random access memory (DRAM) cell with built-in gain stage was proposed. It has increased reading speed, elongated refresh period, low-power oriented operation, and minor layout area penalty. New DRAM cell structure has a current mode sensing read operation, an increased retention time and a reduced memory pheriphery circuitry.
Databáze: OpenAIRE