A high-density DRAM cell with built-in gain stage
Autor: | Kamoulakos, G. Tsiatouhas, Y. Chrisanthopoulos, A. Arapoyanni, A. |
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Jazyk: | angličtina |
Rok vydání: | 2001 |
Předmět: | |
Popis: | A high density dynamic random access memory (DRAM) cell with built-in gain stage was proposed. It has increased reading speed, elongated refresh period, low-power oriented operation, and minor layout area penalty. New DRAM cell structure has a current mode sensing read operation, an increased retention time and a reduced memory pheriphery circuitry. |
Databáze: | OpenAIRE |
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