| Popis: |
Fast neutron irradiations on pre-treated Cz-grown silicon were carried out. The pre-treatmentsinvolved thermal anneals at 450 degrees C and 650 degrees C under high hydrostatic pressure. We mainly examined, by means of IR spectroscopy, the effect of pre-treatments on the production of the oxygen-vacancy (VO) pair. The amplitude of the VO band was found independent on the 450 degrees C treatment although the amplitudes of the TDs bands were reduced. On the other hand, the amplitude of the VO band was found lower in the samples treated at 650 degrees C, indicating an influence on the production of the oxygen-vacancy defects. The results are discussed and explanations are suggested concerning possible interactions between thermal and radiation defects. |
