Autor:	GUPTA, S MESSOLORAS, S SCHNEIDER, JR STEWART, RJ and ZULEHNER, W
Jazyk:	angličtina
Rok vydání:	1992
Popis:	Small-angle neutron scattering is used to study the precipitation behaviour of dissolved oxygen in Czochralski-grown dislocation-free single crystals of silicon doped with antimony. The results are compared with those from undoped silicon. The precipitation of oxygen in silicon is very different for the Sb-doped material as compared with undoped silicon. Sb doping appears to slow down the rate of precipitation of oxygen in silicon into large cushion-shaped SiO2 precipitates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______2127::2488ba1d3f64a52ac8e8f9ae5927c3cc https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3044979 Zobrazit plný text záznamu