Point defects generation kinetics in the Si-SiO2 system and its influence on the interface properties

Autor:	Kropman, D. Kärner, T. Dolgov, S. Heinmaa, I. Londos, C.A.
Jazyk:	angličtina
Rok vydání:	2011
Popis:	It has been shown by means of EPR and NMR technique that at the Si-SiO 2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130°C the dencity of point defects is less than at lower and higher temperature (1100°C and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes. © (2011) Trans Tech Publications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______2127::1cf685569678bb8e80e6ed84de14980f https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3036734 Zobrazit plný text záznamu