| Autor: |
Elmonov, A.A., Yusupov, Maksudbek, Dzhurakhalov, Abdiravuf, Bogaerts, Annemie |
| Jazyk: |
angličtina |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
24th Summer School and International Symposium on Physics of Ionized Gases, August 25-29, 2008, Novi Sad, Serbia |
| Popis: |
The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E(0) = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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