| Autor: |
Oberemok, O.S., Gudymenko, O.Yo., Lytovchenko, V.G., Melnyuk, V.P. |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
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| Popis: |
The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic and oxygen depth profiles. It is shown that arsenic-doped ultra-shallow junction in Si stimulates the background oxygen gettering by SiO2/Si interface at the annealing temperatures higher than 850 C. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35166 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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