| Autor: |
Khojier, K., Sarshar, S., Jafari, F., Borzou, A. |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
|
| Popis: |
Zr thin films were deposited by DC magnetron sputtering technique on Si substrate and then post-annealed at different temperatures (150-750 °C in steps of 150 °C) and times (60 and 180 min) with flow of oxygen. X-ray diffraction (XRD) method was used for study of crystallographic structure. These results showed an orthorhombic structure for annealed films at 150 and a mixed structure of monoclinic and tetragonal for annealed films at higher temperatures (300-750 ºC). XRD result also showed that an increase in annealing temperature and time caused increasing of crystalline size. EDAX and AFM tech-niques were employed for investigation of chemical composition and surface morphology of samples, re-spectively. The results showed a granular structure for all samples, while the O / Zr ratio, grains size and surface roughness were increased with increasing of annealing temperature and time. A two probe instru-ment was used for electrical properties investigation, while hardness of films was measured by nano-indentation test. These results showed that increasing of annealing temperature and time caused increas-ing of electrical resistance and decreasing of hardness in the films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35131 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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