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Thisworkillustratesapplicationofthe uniquefiber-optic instrumentationforin situmonitoringofseveral technologicalprocessescommonlyusedinfabricationof semiconducting thin-film nanostructures. This instrumentation is basedonprinciplesoflowcoherenttandeminterferometry, whichdetermineshighsensitivityandprecision in measuring basic technological parameters, such as thickness of forming layers, temperature and bending of the substrate.The probing wavelength = 1.55 m allows carrying out the measurements on majority of substrates for semiconductor technology: Si, SOI, GaAs, InP, GaP, Al2O3, diamond, ZrO2:Y. Monitoring of such processes as MOVPE, MBEandplasmaetchingin various set-ups was realized. The absolute resolution achieved in these experiments was limited only by calibration accuracy and corresponds to 1 at sensitivity of 0.01 . The accuracy limit in estimating the thickness of layers during their growth is 2 nm. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20681 |
