| Autor: |
Grynko, D.O., Dimitriev, O.P., Smertenko, P.S., Fedoryak, O.M., Opanasiuk, Anatolii Serhiiovych, Tyrkusova, Nadiia Volodymyrivna, Noskov, Yu.V., Ogurtsov, N.A., Pud, A.A. |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
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| Popis: |
Nanocrystallin CdS films with controlled stoichiometry deposited by CSVS were investigated by meth-od of the current-voltage characteristics in ITO/CdS /In structures. It was shown that in the case of cadmi-um excess (S Cd) charge flow mechanism is deter-mined by monomolecular recombination. In the band gap of CdS with excess of cadmium there was detect-ed localized states with energy Et = 0.514 ± 0.026 eV, while in the material with Excess sulfur there are two localized states with energy Et1 = 0.514 ± 0.026 eV and Et2 = 0.700 ± 0.026 eV. Full concentration of lo-calized states is more than 2·1021 m-3 – 5·1022 m-3. Dependence of injection in parameters and nature of in-jection in the structures based on nanostructured CdS films on their stoichiometry was determined When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35240 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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