| Autor: |
Khina, B. B., Tsurko, V. A., Zayats, G. M. |
| Jazyk: |
angličtina |
| Rok vydání: |
2009 |
| Předmět: |
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| Popis: |
An extended Jive-stream model Jor diffusion in silicon is presented. A finite-difference method for computer modeling of dopant diffusion during post-implantation annealing is developed. Conservative implicit finite-difference schemes are obtained using integration-interpolation method. The nonlinear algebraic equation describing the local electroneutrality condition is solved using the bisection method. The obtained nonlinear system of difference equations is solved by iterative method. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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