| Autor: |
Caruso, Enrico, Lin, Jun, Monaghan, Scott, Cherkaoui, Karim, Gity, Farzan, Palestri, Pierpaolo, Esseni, David, Selmi, Luca, Hurley, Paul K. |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Popis: |
This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligned with the semiconductor bandgap play a significant role in the C-V/G-V dispersion of a MOS structure. In addition, for the case of quantization, a non-local model for interface states is required. The model is used to evaluate the energy/depth distribution of border traps in a n-In0.53Ga0.47As /Al2O3 MOS system. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
