Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films

Autor:	González Ossorio, Óscar, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, Tamm, Aile, Kalam, Kristjan, Seemen, Helina, Kukli, Kaupo
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Caracterización eléctrica Atomic layer deposition Deposición atómica de capas Resistive switching Conmutación resistiva Electrical characterization
DOI:	10.1109/cde.2018.8596925
Popis:	Producción Científica In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC parameters. Thin films consisting of mixtures of ZrO 2 and HfO 2 were grown by atomic layer deposition (ALD) on planar Si(100) and TiN substrates by alternately applying certain amounts of constituent binary oxide growth cycles. The experimental results revealed that zirconium oxide rich films provide better resistive switching behavior than pure zirconium oxide or hafnium oxide rich layers. Ministerio de Ciencia, Innovación y Universidades (grant TEC2017-84321- C4-2-R) Fondo Europeo de Desarrollo Regional (project TK134)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______1514::f3e361bec897b85da32cd5c0f300a2be https://doi.org/10.1109/cde.2018.8596925 Zobrazit plný text záznamu