| Autor: |
Kazemi Esfeh, Babak, Makovejev S., Allibert F., Raskin, Jean-Pierre, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference |
| Přispěvatelé: |
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Jazyk: |
francouzština |
| Rok vydání: |
2017 |
| Předmět: |
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| Popis: |
This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) Silicon-on- Insulator (SOI) substrates: one standard (HR-SOI) and one trap-rich (RFeSI80). Using a special test structure, the contribution of substrate and active devices is separated for both in small- and large-signal. It is shown that by using trap-rich substrate technology, a reduction of more than 17 dB of 2nd harmonic is achieved compared with HR SOI substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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