Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films

Autor: Gentsar, P.A., Kudryavtsev, A.A.
Jazyk: angličtina
Rok vydání: 2004
Popis: The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after irradiation by ⁶⁰Co gamma quanta in the dose range 10⁵ – 10⁶ rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation.
Databáze: OpenAIRE