| Autor: |
Budzulyak, S.I., Ermakov, V.M., Kyjak, B.R., Kolomoets, V.V., Machulin, V.F., Novoselets, M.K., Panasjuk, L.I., Sus', B.B., Venger, E.F. |
| Jazyk: |
angličtina |
| Rok vydání: |
2003 |
| Předmět: |
|
| Popis: |
Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
