| Autor: |
Kosyachenko, L.A., Rarenko, I.M., Bodnaruk, O.O., Frasunyak, V.M., Sklyarchuk, V.M., Sklyarchuk, Ye.F., Sun Weiguo, Lu Zheng Xiong |
| Jazyk: |
angličtina |
| Rok vydání: |
1999 |
| Předmět: |
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| Popis: |
The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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