| Autor: |
Bilevych, Ye.O., Boka, A.I., Darchuk, L.O., Gumenjuk-Sichevska, J.V., Sizov, F.F., Boelling, O., Sulkio-Cleff, B. |
| Jazyk: |
angličtina |
| Rok vydání: |
2004 |
| Popis: |
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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