Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Autor: Pereira, Maria Elias, Martins, Rodrigo, Fortunato, Elvira, Barquinha, Pedro, Kiazadeh, Asal
Přispěvatelé: DCM - Departamento de Ciência dos Materiais, CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N), UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Popis: Funding Information: This work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through the FCT—Portuguese Foundation for Science and Technology, under the scope of the projects UIDB/50025/2020-2023, LA/P/0037/2020, doctoral Grant DFA/BD/8335/2020. TERRAMETA project has also funded this work and received funding from the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union’s Horizon Europe research and innovation programme under Grant Agreement No 101097101. Publisher Copyright: © 2023 The Author(s). Published by IOP Publishing Ltd. Neuromorphic computing has been gaining momentum for the past decades and has been appointed as the replacer of the outworn technology in conventional computing systems. Artificial neural networks (ANNs) can be composed by memristor crossbars in hardware and perform in-memory computing and storage, in a power, cost and area efficient way. In optoelectronic memristors (OEMs), resistive switching (RS) can be controlled by both optical and electronic signals. Using light as synaptic weigh modulator provides a high-speed non-destructive method, not dependent on electrical wires, that solves crosstalk issues. In particular, in artificial visual systems, OEMs can act as the artificial retina and combine optical sensing and high-level image processing. Therefore, several efforts have been made by the scientific community into developing OEMs that can meet the demands of each specific application. In this review, the recent advances in inorganic OEMs are summarized and discussed. The engineering of the device structure provides the means to manipulate RS performance and, thus, a comprehensive analysis is performed regarding the already proposed memristor materials structure and their specific characteristics. Moreover, their potential applications in logic gates, ANNs and, in more detail, on artificial visual systems are also assessed, taking into account the figures of merit described so far. publishersversion published
Databáze: OpenAIRE