| Autor: |
Szabo A., Klinkert C., Campi D., Stieger C., Marzari N., Luisier M. |
| Přispěvatelé: |
Szabo, A, Klinkert, C, Campi, D, Stieger, C, Marzari, N, Luisier, M |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Popis: |
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that single-layer (SL) transition metal dichalcogenides are not well suited for TFET applications. There might, however, exist a great variety of 2-D semiconductors that have not even been exfoliated yet; this paper pinpoints some of the most promising candidates among them to realize highly efficient TFETs. SL SnTe, As, TiNBr, and Bi are all found to ideally deliver ON-currents larger than 100 μA/μm at 0.5-V supply voltage and 0.1 nA/μm OFF-current value. We show that going from single to multiple layers can boost the TFET performance as long as the gain from a narrowing bandgap exceeds the loss from the deteriorating gate control. Finally, a 2-D van der Waals heterojunction TFET is revealed to perform almost as well as the best SL homojunction, paving the way for research in optimal 2-D material combinations. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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