A First Order-Curvature Compensation 5ppm/°C Low-Voltage & High PSR 65nm-CMOS Bandgap Reference with one-point 4-bits Trimming Resistor

Autor: Barteselli, E, Sant, L, Gaggl, R, Baschirotto, A
Přispěvatelé: Barteselli, E, Sant, L, Gaggl, R, Baschirotto, A
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Popis: Natural bandgaps produce 1.25V reference voltage that does not operate in low-voltage applications. This paper presents a current-mode bandgap reference circuit operating down to 1V supply (nominal = 1.2V) with low temperature coefficient, low power consumption, high Power-Supply-Rejection (PSR) and high performance robustness for industrial production in the consumer microphones field. The voltage reference is generated by the sum of two currents over a matched resistor: one current is proportional to VEB, the other one is proportional to VT. In 65nm node, a 600mV bandgap (BG) reference voltage consumes 5.2uW (4.3uA) at 1.2V supply. The simulated PSR is -91dB, -43dB and -29dB at DC, 1kHz and 10kHz respectively. Montecarlo simulations show a variation of 1% at 3sigma after 4-bits trimming over a temperature range between -40 degC and 100 degC without any high-order curvature compensation, performing 5ppm/degC temperature coefficient.
Databáze: OpenAIRE