1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability
| Autor: | Zubov, F. I., Gladii, S. P., Shernyakov, Yu M., Maximov, M. V., Semenova, Elizaveta, Kulkova, I. V., Yvind, Kresten, Zhukov, A. E. |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Semiconductor lasers
III-V semiconductors quantum dot lasers threshold current InAs−InGaAs−InP Design of specific laser systems GaAs monolayers gallium arsenide semiconductor quantum dots indium compounds lasing wavelength temperature 20 degC to 50 degC monolayers temperature stability wavelength 1.5 mum temperature 205 K InAs-InGaAsP-InP quantum dot laser InP (001) substrate Lasing action in semiconductors |
| Zdroj: | Zubov, F I, Gladii, S P, Shernyakov, Y M, Maximov, M V, Semenova, E, Kulkova, I V, Yvind, K & Zhukov, A E 2016, ' 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability ', Journal of Physics: Conference Series (Online), vol. 741 . https://doi.org/10.1088/1742-6596/741/1/012109 |
| DOI: | 10.1088/1742-6596/741/1/012109 |
| Popis: | Temperature characteristics of InAs/InGaAsP quantum dot (QD) lasers synthesized on InP (001) substrate are presented. The lasers demonstrate high temperature stability: a threshold current characteristic temperature as high as 205 K in the temperature range between 20 to 50°C was measured. Lasing wavelength of 1.5 μm was achieved by covering QDs with 1.7 monolayers of GaAs. |
| Databáze: | OpenAIRE |
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