Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

Autor: Melnichenko, I. A., Dragunova, A., Kryzhanovskaya, N. V., Viazmitinov, D. V., Semenova, E., Berdnikov, Y.
Jazyk: angličtina
Rok vydání: 2022
Zdroj: Melnichenko, I A, Dragunova, A, Kryzhanovskaya, N V, Viazmitinov, D V, Semenova, E & Berdnikov, Y 2022, ' Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate ', Journal of Physics: Conference Series, vol. 2227, no. 1, 012017 . https://doi.org/10.1088/1742-6596/2227/1/012017
Popis: We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.
Databáze: OpenAIRE