Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si: H Deposition
| Autor: | Xu, Menglei, Wang, Chong, Bearda, Twan, Simoen, Eddy, Radhakrishnan, Hariharsudan Sivaramakrishnan, Gordon, Ivan, Li, Wei, Szlufcik, Jozef, Poortmans, Jef |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Technology
ION-BOMBARDMENT Science & Technology SPECTROSCOPY Energy & Fuels AMORPHOUS-SILICON CRYSTALLINE SILICON Physics Materials Science hydrogen (H-2) plasma DEEP LEVELS Materials Science Multidisciplinary SURFACE PASSIVATION Physics Applied GAP STATES Physical Sciences ELECTRON-SPIN-RESONANCE DENSITY-OF-STATES H) [Hydrogenated amorphous silicon (a-Si] passivation silicon heterojunction (SHJ) solar cells ECR PLASMA |
| Popis: | © 2018 IEEE. A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H2) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H2 gas flow rate and H2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 × 1015 cm-3, equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy. ispartof: IEEE JOURNAL OF PHOTOVOLTAICS vol:8 issue:6 pages:1539-1545 status: published |
| Databáze: | OpenAIRE |
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