Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology
Autor: | Sangani, D, Diaz-Fortuny, Javier, Bury, E, Franco, J, Kaczer, B, Gielen, Georges |
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Rok vydání: | 2023 |
Popis: | ispartof: IEEE Transactions On Device And Materials Reliability status: published |
Databáze: | OpenAIRE |
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