Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

Autor:	Sangani, D, Diaz-Fortuny, Javier, Bury, E, Franco, J, Kaczer, B, Gielen, Georges
Rok vydání:	2023
Popis:	ispartof: IEEE Transactions On Device And Materials Reliability status: published
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______1131::435d34f5a80810dd86c94d8ff9c0e756 https://lirias.kuleuven.be/handle/20.500.12942/722338 Zobrazit plný text záznamu