| Autor: |
Gonzalez Arellano, DL, Bhamrah Harley, J, Yang, J, Gilchrist, JB, McComb, Ryan, MP, Heutz, SEM |
| Rok vydání: |
2016 |
| Popis: |
The advent of “flexible” electronics on plastic substrates with low melting points requires the development of thin film deposition techniques that operate at low temperatures. This is easily achieved with vacuum or solution - processed molecular or polymeric semiconductors, but oxide materials remain a significant challenge. Here we show that zinc oxide (ZnO) can be prep ared using only room - temperature processes, using the molecular thin film precursor zinc phthalocyanine (ZnPc), follow ed by vacuum ultra - violet light treatment to elicit degradation of the organic components and transformation of the deposited film to oxide mate rial. The degradation mechanism was assessed by studying the influence of the atmosphere during the reaction: i t was particularly sensitive to oxygen pressure in the chamber and optimal degradation conditions were established as 3 mbar with 40% oxygen in nitrogen. The morphology of the film was relatively unchanged during the reaction, but detailed analysis of its composition using both scanning transmission electron microscopy (STEM) and secondary ion mass spectrometry (SIMS) revealed that a 40 nm thick layer containing ZnO results from the 100 nm thick precursor after complete reaction. Our methodology represent s a simple route for the fabrication of oxides and multilayer structures that can be easily integrated into current molecular thin film growth setups, without the n eed for a high temperature step . |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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