| Autor: |
Morishige, Ashley E., Heinz, Friedemann D., Laine, Hannu S., Schon, Jonas, Kwapil, Wolfram, Lai, Barry, Savin, Hele, Schubert, Martin C., Buonassisi, Tonio |
| Přispěvatelé: |
Massachusetts Institute of Technology, Albert-Ludwigs-Universität Freiburg, Department of Electronics and Nanoengineering, Argonne National Laboratory, Fraunhofer Institute for Solar Energy Systems, Aalto-yliopisto, Aalto University |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Popis: |
openaire: EC/FP7/307315/EU//SOLARX N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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