| Autor: |
Vähänissi, Ville, Haarahiltunen, Antti, Talvitie, Heli, Yli-Koski, Marko, Savin, Hele |
| Přispěvatelé: |
Sähkötekniikan korkeakoulu, School of Electrical Engineering, Mikro- ja nanotekniikan laitos, Department of Micro and Nanosciences, Aalto-yliopisto, Aalto University |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
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| Popis: |
We have studied experimentally the effect of different initial iron contamination levels on the electrical device properties of p-type Czochralski-silicon solar cells. By systematically varying phosphorus diffusion gettering (PDG) parameters, we demonstrate a strong correlation between the open-circuit voltage (Voc) and the gettering efficiency. Similar correlation is also obtained for the short-circuit current (Jsc), but phosphorus dependency somewhat complicates the interpretation: the higher the phosphorus content not only the better the gettering efficiency but also the stronger the emitter recombination. With initial bulk iron concentration as high as 2 × 1014 cm−3, conversion efficiencies comparable with non-contaminated cells were obtained, which demonstrates the enormous potential of PDG. The results also clearly reveal the importance of well-designed PDG: to achieve best results, the gettering parameters used for high purity silicon should be chosen differently as compared with for a material with high impurity content. Finally we discuss the possibility of achieving efficient gettering without deteriorating the emitter performance by combining a selective emitter with a PDG treatment. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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