High-speed, high-power 1.55 mu m photodetectors
| Autor: | Umbach, A., Trommer, D., Steingrüber, R., Seeger, A., Ebert, W., Unterborsch, G. |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
bandwidth
50 GHz microwave photonics cutoff frequency infrared detectors monolithic integration high power levels high-speed optical techniques high-power photodetectors fiber alignment tolerances 40 Gbit/s spot size transformer optical planar waveguides 40 Gbit/s front-ends optical frequency conversion responsivity maximum output voltage swings inp linear power behaviour 60 GHz high-speed high-power photodetectors high bandwidth p-i-n photodiodes optic/millimeterwave-conversion photodetectors waveguide-integrated p-i-n diodes |
| Popis: | High-speed, high-power photodetectors are required in 40 Gbit/s front-ends as well as for optic/millimeterwave-conversion in 60 GHz broadband mobile systems. The demand for a high bandwidth maintained up to high power levels is fulfilled by waveguide-integrated p-i-n diodes on InP. These photodetectors exhibit a cutoff frequency above 50 GHz. By monolithic integration of a spot size transformer a responsivity of 0.7 A/W is achieved and the fiber alignment tolerances are increased by one order of magnitude. Linear power behaviour up to +12 dBm at 50 GHz and maximum output voltage swings of 1 V are demonstrated. |
| Databáze: | OpenAIRE |
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