1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
| Autor: | Kovshb, A.R., Maleev, N.A., Sakharov, A.V., Moeller, C., Krestnikov, I.L., Kovsh, A.R., Mikhrin, S.S., Zhukov, A.E., Ustinov, V.M., Passenberg, W., Pawlowski, E., Kuenzel, H., Tsatsul'nikov, A.F., Ledentsov, N.N., Bimberg, D., Alferov, Z.I. |
|---|---|
| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
GaAs-based microcavity led
iii-v semiconductors inas/GaInAs quantum dots emission wavelength GaAs molecular beam epitaxial growth 1310 to 1325 nm semiconductor epitaxial layers optical emission properties light emitting diodes gallium arsenide semiconductor quantum dots electroluminescence semiconductor growth indium compounds 1300 nm electroluminescence spectra selforganized quantum dots 1260 to 1340 nm mbe layers molecular beam epitaxy growth inas-GaInAs |
| Popis: | Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be controllably adjusted within 1260-1340 nm by variation of the deposition parameters of the epitaxial layers without the use of any real-time monitoring technique. Based on quantum dot active material with optimized optical emission properties and accurately calibrated layer thicknesses microcavity light emitting diodes were fabricated. 40 mu m diameter devices, as characterized on-wafer, showed narrow electroluminescence spectra (FWHM: 13-26 nm) centered at 1310-1325 nm and narrow circular beam widths of FWHM |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|