1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

Autor: Kovshb, A.R., Maleev, N.A., Sakharov, A.V., Moeller, C., Krestnikov, I.L., Kovsh, A.R., Mikhrin, S.S., Zhukov, A.E., Ustinov, V.M., Passenberg, W., Pawlowski, E., Kuenzel, H., Tsatsul'nikov, A.F., Ledentsov, N.N., Bimberg, D., Alferov, Z.I.
Přispěvatelé: Publica
Jazyk: angličtina
Rok vydání: 2001
Předmět:
Popis: Basic development steps towards the molecular beam epitaxy growth of AlGaAs/GaAs microcavity structures are presented, which contain self-organized InAs/GaInAs quantum dots as the active medium. The emission wavelength of these structures can be controllably adjusted within 1260-1340 nm by variation of the deposition parameters of the epitaxial layers without the use of any real-time monitoring technique. Based on quantum dot active material with optimized optical emission properties and accurately calibrated layer thicknesses microcavity light emitting diodes were fabricated. 40 mu m diameter devices, as characterized on-wafer, showed narrow electroluminescence spectra (FWHM: 13-26 nm) centered at 1310-1325 nm and narrow circular beam widths of FWHM
Databáze: OpenAIRE