| Autor: |
Gerwig, M., Ali, A.S., Neubert, D., Polster, S., Bohme, U., Franze, G., Rosenkranz, M., Popov, A., Ponomarev, I., Jank, M., Vieweger, C., Brendler, E., Frey, L., Kroll, P., Kroke, E. |
| Přispěvatelé: |
Publica |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Popis: |
Cyclopentasilane (CPS) has been studied as an liquid precursor for the deposition of thin silicon films for printed electronics and related applications. The processing involves a UV-induced prepolymerization of CPS followed by liquid deposition and low-temperature thermolysis. An insight into the oligomer and polymer formation including crosslinking in solution using 29Si NMR spectroscopy and electron spin resonance spectroscopy is reported. Formation of SiH (T-units) and SiH3 (M-units) is observed as well as short-lived paramagnetic species. Additionally, the polymerization is followed by Raman spectroscopy. Reactive molecular dynamics simulations are applied to develop a theoretical model for the CPS-ring-opening and crosslinking steps. The experimental and computational data correspond well to each other and allow insight into the mechanism of polymer formation. The processing steps include spin-coating, thermal drying, and conversion to amorphous silicon, H-passivation, and fabrication of a CPS-derived thin-film transistor (TFT), without intermediate silicon crystallization. Further improvement is gained by using tetralene as a solvent, leading to a reduction of the time-consuming polymerization step by one order of magnitude compared to cyclooctane. The overall quality and characteristics of the CPS-derived spin-coated silicon thin films correspond to standard plasma enhanced chemical vapor deposition-derived devices with respect to performance levels. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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