| Autor: |
Passow, T., Kunzer, M., Börner, P., Pletschen, W., Köhler, K., Wagner, J. |
| Přispěvatelé: |
Publica |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Popis: |
Resonant-cavity light-emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO(2)/ZrO(2) DBR with circular emitting apertures of diameters ranging from 5 to 200 µm are demonstrated. The current distribution is investigated by luminance distribution imaging and three-dimensional device simulations for different current densities. The current distribution exhibits a maximum in the aperture centre or is homogeneous up to an aperture diameter of 50 µm independent of the current density. A minimum occurs in the aperture centre for larger diameters increasing with increasing diameter and current density. The current distribution improves with larger n-GaN thickness and higher contact resistance between the transparent In(2)O(3):Sn (ITO) electrode and the p-GaN contact layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
