| Autor: |
Lao, Z., Bronner, W., Thiede, A., Schlechtweg, M., Hülsmann, A., Rieger-Motzer, M., Kaufel, G., Raynor, B., Sedler, M. |
| Přispěvatelé: |
Publica |
| Jazyk: |
angličtina |
| Rok vydání: |
1997 |
| Předmět: |
|
| Popis: |
Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-mu m gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (integral of T = 60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the. divide-by-four dividers using two supply voltages of 4 and - 2.5 V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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