| Autor: |
Maus, S., Maischner, F., Riepe, S., Greulich, J., Lohmüller, E., Schindler, F., Saint-Cast, P., Krenckel, P., Hess, A., Lohmüller, S., Wolf, A., Preu, R. |
| Přispěvatelé: |
Publica |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Popis: |
Herein, boron-doped cast-monocrystalline silicon wafers that have been fabricated using the Seed Manipulation for ARtificially controlled defect Technique (SMART mono-Si) are examined. Their suitability for passivated emitter and rear cell (PERC) fabrication is investigated. Applying a zero busbar layout energy conversion efficiencies of i = 21.9% for SMART mono-Si, i = 22.2% for gallium-doped Cz-Si (Cz-Si:Ga), and i = 22.3% for boron-doped Cz-Si (Cz-Si:B) are achieved at similar doping levels between 0.7 O cm |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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